Silicon Dioxide (SiO₂) Purity:
Over 99.99%, ensuring minimal impurities that could affect semiconductor performance.
Trace Impurities:
Extremely low levels of aluminum, calcium, and iron, usually measured in parts per million (ppm), to prevent contamination.
Hydroxyl (OH) Content:
Below 30 ppm, as low OH content is critical for high-temperature stability.
Thermal Properties:
Softening Point: Around 1710°C.
Annealing Temperature: Approximately 1220°C.
These high thermal resistance properties allow the quartz to withstand the Czochralski process used in silicon wafer production.
Optical Transmission:
Over 90% transparency in the near-ultraviolet (NUV) range, which is necessary for optical components in semiconductor processes.
Bubble Content:
Virtually bubble-free to maintain consistency in quality during processing.
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